【原力达原装】射频半导体
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产品详情
| BC846A-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMALL SIGNAL TRANS |
| BC846AW-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 80V, 100mA |
| BC846B-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SM SIGNAL TRANSISTOR |
| BC846BW-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 80B, 100mA |
| BC847A-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 6V, 10uA |
| BC847AW-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 6V, 10uA |
| BC847B-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SM SIGNAL TRANSISTOR |
| BC847BW-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 50V, .1A |
| BC847C-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SM SIGNAL TRANSISTOR |
| BC847CW-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 50V, .1A |
| BC847W-G | Comchip Technology | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 |
| MMBT2222A-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=40V IC=600mA |
| MMBT2907A-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=60V IC=600mA |
| MMBT2907A-HF | Comchip Technology | 射频(RF)双极晶体管 VCEO=60V IC=600mA |
| MMBT3904-HF | Comchip Technology | 射频(RF)双极晶体管 I=200mA |
| MMBT3906-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=40V IC=100mA |
| MMBT3906-HF | Comchip Technology | 射频(RF)双极晶体管 Transistor I=-200mA |
| MMBT4401-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=40V IC=600mA |
| MMBT4403-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=-40V IC=-600mA. |
| MMBT5401-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=-150V IC=-600mA |
| MMBT5551-G | Comchip Technology | 射频(RF)双极晶体管 VCEO=160V IC=600mA |
