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74HCT9046AN,112 | NXP Semiconductors | 锁相环 - PLL PLL BAND GAP CNTRL W/VCO |
74HCT9046APW,112 | NXP Semiconductors | 锁相环 - PLL PLL BAND GAP CNTRL |
74HCT9046APW,118 | NXP Semiconductors | 锁相环 - PLL PH-LOCKED LOOP W/VCO |
BF1102R,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Dual N-Channel 7V 40mA 200mW |
BFG480W,135 | NXP Semiconductors | 射频(RF)双极晶体管 Single NPN 4.5V 250mA 360mW 40 21GHz |
BGA6130,118 | NXP Semiconductors | 射频放大器 Hi EFF Amp 2700MHz |
BGA7027,135 | NXP Semiconductors | 射频放大器 Hi LinearAmp 2700MHz |
BGA7124,118 | NXP Semiconductors | 射频放大器 Driver Amplifier One-stage |
BGA7127,118 | NXP Semiconductors | 射频放大器 1CH 4.6dB 6V 325mA |
BGA7204,115 | NXP Semiconductors | 射频放大器 BGA7204/HVQFN32/REEL7 |
BGA7210X | NXP Semiconductors | 射频放大器 BGA7210/HVQFN32/REEL7 |
BGA7350,115 | NXP Semiconductors | 射频放大器 BGA7350/HVQFN32/REEL7 |
BGD702,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGD702N,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGD704,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGD802,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGD804,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGD885,112 | NXP Semiconductors | 射频放大器 BULK CATV |
BGE885,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BGU7051,118 | NXP Semiconductors | 射频放大器 900MHz 3.3V 65mA |
BGU7052,118 | NXP Semiconductors | 射频放大器 1.9GHz 3.3V 65mA |
BGU7053,118 | NXP Semiconductors | 射频放大器 2.5GHz 3.3V 65mA |
BGU7063,518 | NXP Semiconductors | 射频放大器 Hi LinearAmp 1980MHz |
BGX7100HN/1,115 | NXP Semiconductors | 调节器/解调器 IQ MOD 5V 184mA |
BGX7100HN/1,118 | NXP Semiconductors | 调节器/解调器 Transmitter IQ modulator |
BGX7101HN/1,115 | NXP Semiconductors | 调节器/解调器 Transmitter IQ modulator |
BGX7101HN/1,118 | NXP Semiconductors | 调节器/解调器 IQ MOD 5V 188mA |
BGX885N,112 | NXP Semiconductors | 射频放大器 860MHZ 17DB GAIN PUSH-PULL AMPLIFIER |
BGY1085A,112 | NXP Semiconductors | 射频放大器 CATV P/P AMP 18.5dB |
BGY587,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BGY685A,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BGY687,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BGY785A,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BGY883,112 | NXP Semiconductors | 射频放大器 CATV AMP MODULE |
BGY885A,112 | NXP Semiconductors | 射频放大器 BULK CATV-MOD |
BLA1011-200R,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS LDMOS NCH 75V |
BLA1011S-200R,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS LDMOS NCH 75V |
BLA6G1011-200R,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS PWR LDMOS 200W |
BLA6G1011L-200RG,1 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLA6G1011LS-200RG, | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLA6H0912-500,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS RADAR PWR LDMOS |
BLA6H1011-600,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS AVIONICS PWR LDMOS |
BLF10H6600PSU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF10H6600PS/LDMOST/TUBE-BULK |
BLF10H6600PU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF10H6600P/LDMOST/TUBE-BULK |
BLF147,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF DMOS 150W VHF |
BLF174XR,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF174XR/ACC-4L/TUBE-BULK |
BLF174XRS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF174XRS/ACC-4L/TUBE-BULK |
BLF178P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR 1200W LDMOS |
BLF178XR,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 3-128MHz 110V 28dB |
BLF178XRS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 3-128MHz 110V 28dB |
BLF184XRS | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 |
BLF184XRSU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS trans |
BLF188XRU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS Transistor |
BLF2324M8LS200PU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS trans |
BLF2425M6L180P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M6L180P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M6LS180P,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M6LS180P:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M7L100J | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M7L100U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M7L140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.45GHz 65V 17.5dB |
BLF2425M7L140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.45GHz 65V 17.5dB |
BLF2425M7L250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M7L250P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M7LS100J | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M7LS100U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M7LS140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M7LS140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 12dB |
BLF2425M7LS250P,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 13dB |
BLF2425M7LS250P:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 13dB |
BLF2425M8L140J | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M8L140U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M8LS140J | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF2425M8LS140U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF245B,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF DMOS 30W VHF P-P |
BLF25M612,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 19dB |
BLF25M612G,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 18dB |
BLF25M612G,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.4-2.5GHz 65V 18dB |
BLF346,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BULK TNS-RFPR |
BLF573S,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 110V 42A 3-Pin |
BLF574XR,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF574XR/ACC-4L/TUBE-BULK |
BLF574XRS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF574XRS/ACC-4L/TUBE-BULK |
BLF578,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF578XR,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF578XRS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 500MHz 110V 23.5dB |
BLF640U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF640/CDIP2/TUBE-BULK |
BLF644PU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF647A,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF647P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/ACC-4L/TUBE-BULK |
BLF647PS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647PS/ACC-4L/TUBE-BULK |
BLF6G10-160RN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 39A 3-Pin |
BLF6G10-200RN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 49A 2-Pin |
BLF6G10-45,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G10L-260PBM,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G10L-260PBM:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G10L-260PRN,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 64A 0.1Ohms |
BLF6G10L-260PRN:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 64A 0.1Ohms |
BLF6G10L-40BRN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G10L-40BRN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G10LS-135R,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G10LS-135R,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G10LS-135RN,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 32A 3-Pin |
BLF6G10LS-135RN:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 32A 3-Pin |
BLF6G10LS-160RN,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 39A 3-Pin |
BLF6G10LS-160RN:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 39A 3-Pin |
BLF6G10LS-200R,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G10LS-200R,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G10LS-200RN,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 49A 2-Pin |
BLF6G10LS-260PRN,1 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 64A 0.1Ohms |
BLF6G10LS-260PRN:1 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 64A 0.1Ohms |
BLF6G10S-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G13L-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G13LS-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G15L-250PBRN:1 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G15L-40BRN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SINGLE 65V 11A 4.3S |
BLF6G15L-40BRN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G15L-40RN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF6G15L-40RN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF6G15L-500H,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TRANS DIGITAL 1.5 GHZ |
BLF6G15LS-250PBRN, | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS |
BLF6G15LS-250PBRN: | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET POWER RF POWER TRANSISTOR |
BLF6G15LS-40RN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF6G15LS-40RN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF6G15LS-500H,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TRANS DIGITAL 1.5 GHZ |
BLF6G20-110,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20-230PRN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G20-230PRN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G20-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20-45,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20-75,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G20LS-110,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20LS-140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20LS-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20LS-180RN,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G20LS-180RN:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G20LS-75,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20LS-75,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G20S-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 13A |
BLF6G20S-45,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-CH 65V 13A Trans MOSFET |
BLF6G21-10G,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G21-10G,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TransMOSFET N-CH 65V |
BLF6G22-180PN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22-180PN,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor |
BLF6G22-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22-45,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22L-40BN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G22L-40BN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF6G22L-40P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G22L-40P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G22LS-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22LS-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22LS-130,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22LS-130,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22LS-40BN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR 40W |
BLF6G22LS-40BN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR 40W |
BLF6G22LS-40P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G22LS-40P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G22LS-75,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22LS-75,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G22S-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF6G27-10,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G27-10,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-CH 65V 3.5A Trans MOSFET |
BLF6G27-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 29A 0.16Ohms |
BLF6G27-10G,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G27-10G,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 WIMAX POWER LDMOS TRANSISTOR |
BLF6G27-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G27-45,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS WIMAX PWR LDMOS |
BLF6G27L-40P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G27L-40P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G27L-50BN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF6G27L-50BN/ACC-6L/TUBE-BULK |
BLF6G27L-50BN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF6G27L-50BN/ACC-6L/REEL13 |
BLF6G27LS-135,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G27LS-40P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G27LS-40P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF6G27LS-50BN,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF6G27LS-50BN/ACC-6L/TUBE-BUL |
BLF6G27LS-50BN,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF6G27LS-50BN/ACC-6L/REEL13 |
BLF6G27S-45,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G27S-45,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS WIMAX PWR LDMOS |
BLF6G27S-45,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS WIMAX PWR LDMOS |
BLF6G38-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 65V 34A 3-Pin |
BLF6G38-10G,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38-10G,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38-25,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38-50,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38-50,135 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS WIMAX PWR LDMOS |
BLF6G38LS-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38LS-50,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38LS-50,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS WIMAX PWR LDMOS |
BLF6G38S-25,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF6G38S-25,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power Transistor |
BLF6H10LS-160,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 700-1GHz 104V 20dB |
BLF6H10LS-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 700-1GHz 104V 20dB |
BLF7G10L-250,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G10L-250,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G10LS-250,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G15LS-200,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 56A 0.048Ohms |
BLF7G15LS-200,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 56A 0.048Ohms |
BLF7G15LS-300P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 45A 0.065Ohms |
BLF7G15LS-300P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 45A 0.065Ohms |
BLF7G20L-200,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.093Ohms |
BLF7G20L-200,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.093Ohms |
BLF7G20L-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.078Ohms |
BLF7G20L-250P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.078Ohms |
BLF7G20L-90P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power Transistor |
BLF7G20L-90P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G20LS-140P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.15Ohms |
BLF7G20LS-140P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.15Ohms |
BLF7G20LS-200,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.093Ohms |
BLF7G20LS-200,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.093Ohms |
BLF7G20LS-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.078Ohms |
BLF7G20LS-250P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 0.078Ohms |
BLF7G20LS-90P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power Transistor |
BLF7G20LS-90P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power Transistor |
BLF7G21L-160P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G21LS-160,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF7G21LS-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF7G21LS-160P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G21LS-160P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G22L-100P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF7G22L-130,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR PWR LDMOS |
BLF7G22L-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G22L-200,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G22L-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G22L-250P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G22LS-100P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF7G22LS-100P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pwr LDMOS transistor transistor |
BLF7G22LS-130,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TransMOSFET N-CH 65V |
BLF7G22LS-130,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TransMOSFET N-CH 65V |
BLF7G22LS-160,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G22LS-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF7G22LS-200,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G22LS-200,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G22LS-250P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G22LS-250P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G24L-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF7G24L-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G24L-160P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 65V 18.5dB |
BLF7G24LS-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF7G24LS-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF7G24LS-140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G24LS-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G24LS-160P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 65V 18.5dB |
BLF7G24LS-160P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 65V 18.5dB |
BLF7G27L-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G27L-135,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF7G27L-135,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLF7G27L-140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27L-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27L-150P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27L-200PB,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.65GHz 65V 17.7dB |
BLF7G27L-200PB,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.65GHz 65V 17.7dB |
BLF7G27L-75P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 18A 0.29Ohms |
BLF7G27L-90P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27L-90P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27LS-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G27LS-100,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V |
BLF7G27LS-140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27LS-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27LS-150P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 SINGLE 65V 37A 0.86S |
BLF7G27LS-150P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27LS-75P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 18A 0.29Ohms |
BLF7G27LS-75P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 65V 18A 0.29Ohms |
BLF7G27LS-90P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF7G27LS-90P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF861A,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS 150W UHF |
BLF871,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 89V 3-Pin |
BLF871S,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR RF PWR LDMOS |
BLF878,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLF879P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF POWER LDMOS TRANSISTOR |
BLF879PS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF 500W LDMOS |
BLF881,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF power LDMOS transistor |
BLF881S,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF power LDMOS transistor |
BLF884P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 50V 240mOhms |
BLF884PS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF PWR LDMOS TRNSTR |
BLF888,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANSISTOR RF PWR LDMOS |
BLF888AS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF POWER LDMOS TRANSISTOR |
BLF888B,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF pwr LDMOS transistor |
BLF888BS,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 UHF pwr LDMOS transistor |
BLF8G10L-160,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF8G10L-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF8G10LS-160,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF8G10LS-160,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLF8G10LS-160V,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 960MHz 65V 19.7dB |
BLF8G10LS-160V,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 960MHz 65V 19.7dB |
BLF8G20LS-200V,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8-2GHz 65V 17.5dB |
BLF8G20LS-200V,115 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF8G20LS-200V/ACC-6L/REEL7 |
BLF8G20LS-200V,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8-2GHz 65V 17.5dB |
BLF8G20LS-400PGVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G20LS-400PGVQ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G20LS-400PVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G22L-160BV,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 160W LDMOS TRANSISTR |
BLF8G22L-160BV,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 160W LDMOS TRANSISTR |
BLF8G22LS-160BV,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 pwr LDMOS transistor |
BLF8G22LS-160BV:11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 160W LDMOS TRANSISTR |
BLF8G22LS-200GV,12 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 20dB |
BLF8G22LS-200GVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF8G22LS-200GV/ACC-6L/REEL13 |
BLF8G22LS-200V,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 20dB |
BLF8G22LS-200V,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 20dB |
BLF8G22LS-240J | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G22LS-240U | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G22LS-270GV,12 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 17.7dB |
BLF8G22LS-270GVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF8G22LS-270GV/ACC-6L/REEL13 |
BLF8G22LS-270V,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 17.7dB |
BLF8G22LS-270V,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.1GHz 65V 17.7dB |
BLF8G24L-200P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 68V 16.5dB |
BLF8G24L-200P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 68V 16.5dB |
BLF8G24LS-200P,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 68V 16.5dB |
BLF8G24LS-200P,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.35GHz 68V 16.5dB |
BLF8G27LS-100GVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-100GVQ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-140,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-140,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-150GVJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-150GVQ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-150VJ | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF8G27LS-150VU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLF988,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF988/LDMOST/TUBE-BULK |
BLF988S,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF988S/LDMOST/TUBE-BULK |
BLL1214-35,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BULK TNS-MICP |
BLL6G1214L-250,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLL6G1214LS-250,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLL6H0514L-130,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 100V 18A 200mOhms |
BLL6H0514LS-130,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 100V 18A 200mOhms |
BLL6H1214-500,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS L-BAND RADAR LDMOS |
BLL6H1214L-250,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 100V 42A 100mOhms |
BLL6H1214LS-250,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single 100V 42A 100mOhms |
BLL6H1214LS-500,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLL6H1214P2S-250Z | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS L-band radar power module |
BLM6G10-30,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 W-CDMA 920MHZ-960MHZ POWER MMIC |
BLM6G22-30G,118 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 W-CDMA 2100-2200MHZ POWER MMIC |
BLM7G22S-60PBGY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-stage power MMIC |
BLM7G22S-60PBY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-stage power MMIC |
BLP15M7160PY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLP7G07S-140PY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLP7G22-05Z | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 5 W plastic LDMOS power transistor |
BLP8G10S-45PGY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLP8G10S-45PY | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor |
BLS6G2731-120,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLS6G2731-6G,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Trans MOSFET N-CH 60V 3.5A 3-Pin |
BLS6G2731S-120,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLS6G2731S-130,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS S-BAND RADAR POWER TRANSISTOR |
BLS6G2735L-30,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 60V 580mOhms |
BLS6G2735LS-30,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 60V 580mOhms |
BLS6G2933S-130,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS S-BAND RADAR LDMOS |
BLS6G3135-120,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLS6G3135-20,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS TNS |
BLS6G3135S-120,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS S-BAND RADAR LDMSO |
BLS6G3135S-20,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 TRANS S-BAND RADAR LDMOS |
BLS7G2325L-105,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER LDMOS TRANSISTOR |
BLS7G2729L-350P,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS S-Band radar power transistor |
BLS7G2730L-200PU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS7G2730L-200P/LDMOST/TUBE-BU |
BLS7G2730LS-200PU | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS7G2730LS-200P/LDMOST/TUBE-B |
BLS7G2933S-150,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS S-BAND RADAR POWER TRANSISTOR |
BLU6H0410L-600P,11 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 PWR LDMOS TRANSISTOR |
BLU6H0410LS-600P,1 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLU6H0410LS-600P/LDMOST/TUBE-B |
CLF1G0035-100,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Broadband RF power GaN HEMT |
CLF1G0035-50,112 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Broadband RF power GaN HEMT |
CLRC63201T/0FE,112 | NXP Semiconductors | RFID应答器 I.CODE HS READER |
CLRC66301HN,557 | NXP Semiconductors | 射频收发器 Contactless readr IC IC |
CLRD710,599 | NXP Semiconductors | RFID应答器 CLRD710/READER/SPEC// |
HT1ICS3002W/V6F,00 | NXP Semiconductors | RFID应答器 HT1ICS3002W/V6F/UNCASED/FOIL |
HTCICC6402FUG/AM,0 | NXP Semiconductors | RFID应答器 HITAG transponder IC |
HTCICC6403FUG/AM,0 | NXP Semiconductors | RFID应答器 HITAG transponder IC |
HTMS1001FUG/AM,005 | NXP Semiconductors | RFID应答器 Smart Label/Tag Ics |
HTMS8001FUG/AM,005 | NXP Semiconductors | RFID应答器 Smart Label/Tag Ics |
HTMS8101FUG/AM,005 | NXP Semiconductors | RFID应答器 HITAG transponder IC |
HTMS8201FUG/AM,005 | NXP Semiconductors | RFID应答器 HITAG transponder IC |
HTSICC4801EW/C7,00 | NXP Semiconductors | RFID应答器 HTSICC4801EW UNCASED/FOIL//C7 |
HTSICC4801EW/C7,02 | NXP Semiconductors | RFID应答器 HTSICC4801EW/C7/UNCASED/WAFLM |
HTSICC5601EW/C7,00 | NXP Semiconductors | RFID应答器 HTSICC5601EW UNCASED/FOIL//C7 |
HTSICC5601EW/C7,02 | NXP Semiconductors | RFID应答器 HTSICC5601EW/C7/UNCASED/WAFLM |
HTSICH4801EW/V7,00 | NXP Semiconductors | RFID应答器 HTSICH4801EW/V7/UNCASED/FOIL |
HTSICH5601EW/V7:00 | NXP Semiconductors | RFID应答器 HTSICH5601EW/V7/UNCASED/FOIL |
JN5142N/J01,518 | NXP Semiconductors | 射频微控制器 - MCU Xceive 2.4GHz 128KB |
JN5148/001,515 | NXP Semiconductors | 射频微控制器 - MCU 32-BIT MCU AND IEEE802.15.4 TRNSCVR |
JN5148/001,518 | NXP Semiconductors | 射频微控制器 - MCU 32-BIT MCU AND IEEE802.15.4 TRNSCVR |
JN5148/J01,515 | NXP Semiconductors | 射频微控制器 - MCU 32-BIT MCU IEEE802.15.4 TRNSCVR |
JN5148/J01,518 | NXP Semiconductors | 射频微控制器 - MCU 32-BIT MCU IEEE802.15.4 TRNSCVR |
JN5148/Z01,515 | NXP Semiconductors | 射频微控制器 - MCU RISC 32b 128KB 3.6V |
JN5148/Z01,518 | NXP Semiconductors | 射频微控制器 - MCU RISC 32b 128KB 3.6V |
JN5161/001,518 | NXP Semiconductors | 射频微控制器 - MCU IEEE802.15.4Wireless Microcontroller |
JN5164/001,518 | NXP Semiconductors | 射频微控制器 - MCU IEEE802.15.4Wireless Microcontroller |
JN5168/001,518 | NXP Semiconductors | 射频微控制器 - MCU IEEE802.15.4Wireless Microcontroller |
MF0ICU1001W/S7DL,0 | NXP Semiconductors | RFID应答器 MIFARE ULTRALIGHT CONTACTLESS SNGL IC |
MF0ICU1001W/U7DL,0 | NXP Semiconductors | RFID应答器 MIFARE ULTRALIGHT CONTACTLESS SNGL IC |
MF0ICU1101W/S7DL,0 | NXP Semiconductors | RFID应答器 MIFARE ULTRALIGHT CONTACTLESS SNGL IC |
MF0ICU1101W/U7DL,0 | NXP Semiconductors | RFID应答器 MIFARE ULTRALIGHT CONTACTLESS SNGL IC |
MF0ICU2001DUD,005 | NXP Semiconductors | 射频收发器 MIFARE Ultralight C Wafer |
MF0ICU2101DUD,005 | NXP Semiconductors | 射频收发器 MIFARE Ultralight C Wafer |
MF0MOA4U10/D,118 | NXP Semiconductors | 射频无线杂项 RF Transceiver |
MF0MOU2001DA4,118 | NXP Semiconductors | 射频收发器 MIFARE Ultralight C PLLMC |
MF0MOU2101DA4,118 | NXP Semiconductors | 射频收发器 MIFARE Ultralight C PLLMC |
MF1PLUS6001DA4/03, | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 2KB |
MF1PLUS6001DUD/03, | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 2KB |
MF1PLUS6031DA4/03, | NXP Semiconductors | RFID应答器 RFID MODULES DEV TOOLS |
MF1PLUS6031DUD/03, | NXP Semiconductors | RFID应答器 RFID MODULES & DEVELOPMENT TOOLS |
MF1PLUS8001DA4/03, | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 4KB |
MF1PLUS8001DUD/03, | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 4KB |
MF1PLUS8031DA4/03, | NXP Semiconductors | RFID应答器 RFID MODULES DEV TOOLS |
MF1PLUS8031DUD/03, | NXP Semiconductors | RFID应答器 RFID MODULES & DEVELOPMENT TOOLS |
MF1S5030DA3,118 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 1K SMART CARD |
MF1S5030DA4,118 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 1K SMART CARD |
MF1S5030DA8,118 | NXP Semiconductors | RFID应答器 1KB 16bit 106Kbps |
MF1S5037DUA,005 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 1K CONTACTLESS SMART IC |
MF1S5037DUG,005 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 1K CONTACTLESS SMART IC |
MF1S7035DA4,118 | NXP Semiconductors | RFID应答器 MIFARE Classic 4K CONTACTLESS SMRT CRD |
MF1S7035DUB,005 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 4K CONTACTLESS SMART IC |
MF1S7035DUC,005 | NXP Semiconductors | RFID应答器 MIFARE CLASSIC 4K CONTACTLESS SMART IC |
MF1SPLUS6001DA4/03 | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 2KB |
MF1SPLUS6031DA4/03 | NXP Semiconductors | RFID应答器 CONTACTLESS SMART CARD IC |
MF1SPLUS8001DA4/03 | NXP Semiconductors | RFID应答器 MIFARE CRYPTO1 AES 848Kbps 4KB |
MF1SPLUS8031DA4/03 | NXP Semiconductors | RFID应答器 CONTACTLESS SMART CARD IC |
MF3ICD2101DUD/05,0 | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3ICD4101DUD/05,0 | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3ICD8101DUD/05,0 | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3ICDH2101DUD/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3ICDH4101DUD/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3ICDH8101DUD/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3MOD2101DA4/05,1 | NXP Semiconductors | RFID应答器 MIFARE DESFire EV1 Contctless multi-app |
MF3MOD4101DA4/05,1 | NXP Semiconductors | RFID应答器 MIFARE DESFire EV1 Contctless multi-app |
MF3MOD8101DA4/05,1 | NXP Semiconductors | RFID应答器 MIFARE DESFire EV1 Contctless multi-app |
MF3MODH2101DA4/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3MODH4101DA4/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MF3MODH8101DA4/05, | NXP Semiconductors | RFID应答器 MIFARE DESFIRE EV1 CONTACTLESS MULTIAPP |
MFRC50001T/0FE,112 | NXP Semiconductors | RFID应答器 MIFARE READER |
MFRC52201HN1,115 | NXP Semiconductors | RFID应答器 MFRC52201HN1/HVQFN32/REEL7 |
MFRC52201HN1,118 | NXP Semiconductors | RFID应答器 MFRC52201HN1/HVQFN32/REEL13 |
MFRC52201HN1,157 | NXP Semiconductors | RFID应答器 CL READER IC'S |
MFRC52202HN1,115 | NXP Semiconductors | RFID应答器 MFRC52202HN1/HVQFN32/REEL7 |
MFRC52202HN1,157 | NXP Semiconductors | RFID应答器 CONTACTLESS READER IC |
MFRC52301HN1,157 | NXP Semiconductors | RFID应答器 IC TRANSMISSION MOD 32-HVQFN |
MFRC52302HN1,157 | NXP Semiconductors | RFID应答器 CONTACTLESS READER IC |
MFRC53001T/0FE,518 | NXP Semiconductors | RFID应答器 IC READER 13.56MHZ |
OL2300NHN/F,118 | NXP Semiconductors | 锁相环 - PLL Fractional-N PLL Based Transmitter |
OL2311AHN/C0B,515 | NXP Semiconductors | 射频接收器 Single-chip sub 1GHz RF receiver |
P5DF072EHN/T0PD409 | NXP Semiconductors | RFID应答器 MIFARE SAM AV1 |
P5DF072EV2/T0PD409 | NXP Semiconductors | RFID应答器 MIFARE SAM AV1 |
P5DF081HNT1AD2060 | NXP Semiconductors | RFID应答器 MIFARE SAM AV2 DOC |
P5DF081HNT1AD2060, | NXP Semiconductors | RFID应答器 MIFARE SAM AV2 |
P5DF081X0/T1AD2060 | NXP Semiconductors | RFID应答器 MIFARE SAM AV2 DOC AND SAMPLING |
P5DF081X0T1AD2060S | NXP Semiconductors | RFID应答器 MIFARE SAM AV2 DOC AND SAMPLING |
PCF7900NHN/C0K,118 | NXP Semiconductors | 射频发射器 Fractional-N-PLL UHF Transmitter |
PCF7900VHN/C0L,118 | NXP Semiconductors | 射频发射器 FRACTIONAL-N-PLL UHF TRANSMITTER ISM |
PCF7922ATTM1AE0700 | NXP Semiconductors | 射频无线杂项 REMOTE KEYLESS ENTRY |
PCF7930AS/3851,122 | NXP Semiconductors | RFID应答器 RE-WRITEABLE TRANSPONDER |
PCF7931AS/3851,122 | NXP Semiconductors | RFID应答器 READ ONLY TRANSPONDER |
PCF7935AS/3851,122 | NXP Semiconductors | RFID应答器 SECURITY TRANSPONDER SECT |
PCF7936AS/3851/C,1 | NXP Semiconductors | RFID应答器 32x8 256bit 39ms |
PCF7939PA/C0BC1200 | NXP Semiconductors | RFID应答器 IMMOBILIZER TRANSPONDER |
PCF7939VA/C0BC0600 | NXP Semiconductors | RFID应答器 IMMOBILIZER TRANSPONDER |
PCF7941ATSM2AB120, | NXP Semiconductors | RFID应答器 SECURITY TRANSPONDR RISC CONTROLLER |
PCF7941ATT/3601/2A | NXP Semiconductors | 射频无线杂项 PCF7941ATT/3601/2A/TSSOP20/REE |
PCF7941ATTM2AB1200 | NXP Semiconductors | 射频无线杂项 REMOTE KEYLESS ENTRY |
PCF7941ETT/M2AB300 | NXP Semiconductors | 射频无线杂项 REMOTE KEYLESS ENTRY |
PCF7952ATT/M1CC15, | NXP Semiconductors | 射频无线杂项 3D Keyless entry start active tag IC |
PCF7961ATTM1AE0700 | NXP Semiconductors | 射频无线杂项 REMOTE KEYLESS ENTRY |
PCF7961XTTC1AE0915 | NXP Semiconductors | 射频无线杂项 REMOTE KEYLESS ENTRY |
PCF7991AT/1081/M,1 | NXP Semiconductors | 射频无线杂项 ADVANCED BASESTATION IC |
PCJ7991AT/1081/M,1 | NXP Semiconductors | 射频无线杂项 ADVANCED BASESTATION IC |
PN5120A0HN/C1,518 | NXP Semiconductors | RFID应答器 13.56MHz ASK 3.6V |
PN5120A0HN/C1,557 | NXP Semiconductors | RFID应答器 PN512 TRANSMISSION MODULE |
PN5120A0HN/C2,518 | NXP Semiconductors | RFID应答器 PN512 TRANSMISSION MODULE |
PN5120A0HN/C2,557 | NXP Semiconductors | RFID应答器 PN512 TRANSMISSION MODULE |
PN5120A0HN1/C1,118 | NXP Semiconductors | RFID应答器 COMBO ANALOG/DIGI IC |
PN5120A0HN1/C1,157 | NXP Semiconductors | RFID应答器 COMBO ANALOG/DIGI IC |
PN5120A0HN1/C2,118 | NXP Semiconductors | RFID应答器 PN512 TRANSMISSION MODULE |
PN5120A0HN1/C2,157 | NXP Semiconductors | RFID应答器 PN512 TRANSMISSION MODULE |
PN5321A3HN/C106,51 | NXP Semiconductors | 射频无线杂项 Combined Analogue Digital IC |
PN5321A3HN/C106,55 | NXP Semiconductors | 射频无线杂项 Combined Analogue Digital IC |
PN5331B3HN/C270,51 | NXP Semiconductors | 射频无线杂项 Com Controller 40Pin |
PN5331B3HN/C270:55 | NXP Semiconductors | 射频无线杂项 Com Controller 40Pin |
PN544PC2ET/C30702, | NXP Semiconductors | 射频微控制器 - MCU PN544PC2ET/C30702/TFBGA64/REEL |
PN544PC2ET/C30703J | NXP Semiconductors | 射频微控制器 - MCU PN544PC2ET/C30703/TFBGA64/REEL |
PN544PC2ET/C3070EL | NXP Semiconductors | 射频微控制器 - MCU PN544PC2ET/C30702/TFBGA64/TRAY |
PN544PC2ET/C3070QL | NXP Semiconductors | 射频微控制器 - MCU PN544PC2ET/C30702/TFBGA64/TRAY |
PQJ7980AHN/C0IH,51 | NXP Semiconductors | 射频收发器 LO-PWR SINGLECHIP XCVR (LOPSTER) |
PQJ7980AHN/C0JL,51 | NXP Semiconductors | 射频收发器 LO-PWR SINGLECHIP XCVR (LOPSTER) |
PR5331C3HN/C360,51 | NXP Semiconductors | RFID应答器 13.56MHz 5V 0.55W |
PR5331C3HN/C360,55 | NXP Semiconductors | RFID应答器 13.56MHz 5V 0.55W |
PR5331C3HN/C360:55 | NXP Semiconductors | 射频微控制器 - MCU 13.56MHz 5V 0.55W |
SA602AD/01 | NXP Semiconductors | 射频混合器 LV LNA DOUBLE BAL MIXER/OSC |
SA604AD/01 | NXP Semiconductors | 射频放大器 FM IF SYSTEM LOW PWR |
SA604AD/01,118 | NXP Semiconductors | 射频放大器 LV FM IF SYSTEM -40TO+85 |
SA605D/01,112 | NXP Semiconductors | 射频混合器 LP MIXER FM IF SYS |
SA605DK/01,112 | NXP Semiconductors | 射频混合器 LP MIXER FM IF SYS |
SA605DK/01,118 | NXP Semiconductors | 射频混合器 LV MIXER FM IF SYS. -40 TO +85 |
SA606D/01,112 | NXP Semiconductors | 射频无线杂项 LV NB FM IF RCVR SYS |
SA606D/01,118 | NXP Semiconductors | 上下转换器 LV NB FM IF RCVR SYS |
SA606DK/01 | NXP Semiconductors | 上下转换器 LV NB FM IF RCVR SYS |
SA606DK/01,118 | NXP Semiconductors | 射频无线杂项 LP MIXER FM IF SYS |
SA607DK/01 | NXP Semiconductors | 射频混合器 LV NB FM IF RCVR SYS |
SA608DK/01 | NXP Semiconductors | 射频混合器 LV NB FM IF RECEIVER W/FREQ CK |
SA615D/01 | NXP Semiconductors | 上下转换器 HI PERF LP MIXER FM IF SYSTEM |
SA615D/01,112 | NXP Semiconductors | 射频无线杂项 HI PERF LP MIXER FM |
SA615DK/01 | NXP Semiconductors | 上下转换器 HI PERF LP MIXER FM IF SYSTEM |
SA615DK/01,112 | NXP Semiconductors | 射频无线杂项 HI PERF LP MIXER FM |
SA616BS,115 | NXP Semiconductors | 射频混合器 Low-voltage HP mixer FM IF system |
SA616DK/01 | NXP Semiconductors | 射频混合器 LV NB FM IF RCVR SYS |
SA616DK/01,112 | NXP Semiconductors | 射频混合器 LV NB FM IF RCVR SYS |
SA630D/01 | NXP Semiconductors | RF 开关 IC SPDT SW -40 TO +85 |
SA636DK/01,112 | NXP Semiconductors | 射频混合器 LV HI PERF MIX FM IF |
SA639DH/01 | NXP Semiconductors | 射频混合器 LV MIX FM IF SYS W/FILT AMP AND DS |
SA639DH/01,112 | NXP Semiconductors | 射频混合器 LV MIX FM IF SYS |
SA639DH/01,118 | NXP Semiconductors | 射频混合器 LV MIX FM IF SYS W/FILT AMP AND DS |
SL2ICS2001DW/V1D,3 | NXP Semiconductors | 射频无线杂项 I CODE SLI SMART LABEL IC |
SL2S2002FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX |
SL2S2102FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX |
SL2S5002FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX-L |
SL2S5102FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX-L |
SL2S5302FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX-S |
SL2S5402FUD,003 | NXP Semiconductors | 射频无线杂项 ICODE SLIX-S |
SL3S1203FUD/BG,003 | NXP Semiconductors | RFID应答器 UCODE G2IL AND G2IL+ |
SL3S1203FUF,003 | NXP Semiconductors | RFID应答器 UCODE G2IL AND G2IL+ |
SL3S1213FUD/BG,003 | NXP Semiconductors | RFID应答器 UCODE G2IL AND G2IL+ |
SL3S1213FUF,003 | NXP Semiconductors | RFID应答器 UCODE G2IL AND G2IL+ |
TDA10025HN/C1,518 | NXP Semiconductors | 调节器/解调器 Dual Cable (QAM) Demodulator |
TDA10027HN/C1,557 | NXP Semiconductors | 调节器/解调器 DUAL CBL DEMOD W/ OUT-OF BAND RECVR |
TDA18212HN/M/C1,51 | NXP Semiconductors | 调谐器 870MHz 5dB 3.6V |
TDA18212HN/M/C1:55 | NXP Semiconductors | 调谐器 870MHz 5dB 3.6V |
TDA18212HN/S/C1,51 | NXP Semiconductors | 调谐器 Tuner-terrestrial Cable digi TV recept |
TDA18212HN/S/C1,55 | NXP Semiconductors | 调谐器 Tuner-terrestrial Cable digi TV recept |
TDA18214AHN/C1,518 | NXP Semiconductors | 调谐器 TDA18214AHN/C1/HVQFN40/REEL13D |
TDA18214AHN/C1,557 | NXP Semiconductors | 调谐器 TDA18214AHN/C1/HVQFN40/TRAYDPM |
TDA18214HN/C1,518 | NXP Semiconductors | 调谐器 TDA18214HN/C1/HVQFN40/REEL13DP |
TDA18214HN/C1,557 | NXP Semiconductors | 调谐器 TDA18214HN/C1/HVQFN40/TRAYDPM |
TDA18219HN/C1,518 | NXP Semiconductors | 调谐器 Tuner-terrestrial Cable digi TV recept |
TDA18219HN/C1,557 | NXP Semiconductors | 调谐器 Tuner-terrestrial Cable digi TV recept |
TDA18250AHN/C1,518 | NXP Semiconductors | 调谐器 TDA18250AHN/C1/HVQFN32/REEL13D |
TDA18250AHN/C1,557 | NXP Semiconductors | 调谐器 TDA18250AHN/C1/HVQFN32/TRAYDPM |
TDA18250BHN/C1Y | NXP Semiconductors | 调谐器 TDA18250BHN/C1/HVQFN32/REEL13D |
TDA18250HN/C1,518 | NXP Semiconductors | 调谐器 CABLE SILICON TUNER |
TDA18252HN/C1,518 | NXP Semiconductors | 调谐器 IC DGTL CABLE SIL TUNER |
TDA18253HN/C1,518 | NXP Semiconductors | 调谐器 IC DGTL CABLE SIL TUNER |
TDA18254AHN/C1,518 | NXP Semiconductors | 调谐器 1002MHz 7.5dB 3.3V |
TDA18260HN/C1,518 | NXP Semiconductors | 调谐器 DUAL CBL SILICON TUNER |
TDA18260HN/C1,557 | NXP Semiconductors | 调谐器 DUAL CBL SILICON TUNER |
TDA18273HN/C1,518 | NXP Semiconductors | 调谐器 HYB TV 3MHz 4.6dB |
TDA18274HN/C1,518 | NXP Semiconductors | 调谐器 TDA18274HN/C1/HVQFN40/REEL13DP |
TDA18274HN/C1,557 | NXP Semiconductors | 调谐器 TDA18274HN/C1/HVQFN40/TRAYDPM |
TDA8296HN/C1,518 | NXP Semiconductors | 调节器/解调器 DIGITAL GLOBAL IF DEMODULATOR |
TDA9899HN/V2,518 | NXP Semiconductors | 上下转换器 TDA9899HN/V2/HVQFN48/REEL13DP |
TEF6601T/V5,512 | NXP Semiconductors | 调谐器 100MHz 8.5V |
TEF6601T/V5,518 | NXP Semiconductors | 调谐器 100MHz 8.5V |
TEF6606T/V5,512 | NXP Semiconductors | 调谐器 RF TRANSCEIVER |
TEF6606T/V5,518 | NXP Semiconductors | 调谐器 RF TRANSCEIVER |
TEF6607T/V5,512 | NXP Semiconductors | 调谐器 Power Interface |
TEF6607T/V5,518 | NXP Semiconductors | 调谐器 Power Interface |
TEF6614T/V1,512 | NXP Semiconductors | 调谐器 LOW IF ANALOG CAR RADIO TUNER ICS |
TEF6614T/V1,518 | NXP Semiconductors | 调谐器 LOW IF ANALOG CAR RADIO TUNER ICS |
TEF6616T/V1,512 | NXP Semiconductors | 调谐器 RF TRANSCEIVER |
TEF6616T/V1,518 | NXP Semiconductors | 调谐器 RF TRANSCEIVER |
TEF6621T/V1,512 | NXP Semiconductors | 调谐器 IC TUNER CAR RADIO |
TEF6621T/V1,518 | NXP Semiconductors | 调谐器 IC TUNER CAR RADIO |
TEF6621T/V1T,512 | NXP Semiconductors | 调谐器 TEF6621T/V1T/SO32/TUBEDP |
TEF6621T/V1T,518 | NXP Semiconductors | 调谐器 TEF6621T/V1T/SO32/REEL13DP |
TEF6624T/V1,512 | NXP Semiconductors | 调谐器 IC TUNER CAR RADIO |
TEF6624T/V1,518 | NXP Semiconductors | 调谐器 IC TUNER CAR RADIO |
TEF6624T/V1T,512 | NXP Semiconductors | 调谐器 TEF6624T/V1T/SO32/TUBEDP |
TEF6624T/V1T,518 | NXP Semiconductors | 调谐器 TEF6624T/V1T/SO32/REEL13DP |
TEF6730AHW/V1S,518 | NXP Semiconductors | 调谐器 FRONTEND FOR DIGITAL IF CAR RADIO |
TEF6730AHW/V1S,557 | NXP Semiconductors | 调谐器 FRONTEND FOR DIGITAL IF CAR RADIO |
TEF6730HW/V1S,518 | NXP Semiconductors | 调谐器 IC FRONT END DGTL CARRAD |
TEF6730HW/V1S,557 | NXP Semiconductors | 调谐器 FRONT END DGT CAR RADio |
TEF6862HL/V1S,518 | NXP Semiconductors | 调谐器 CAR RADIO ENHANCED SELECTIVITY TUNER |
TEF6862HL/V1S,557 | NXP Semiconductors | 调谐器 CAR RADIO ENHANCED SELECTIVITY TUNER |
TEF6901AH/V5S,518 | NXP Semiconductors | 调谐器 INTEGRATED CAR RADIO |
TEF6901AH/V5S,557 | NXP Semiconductors | 调谐器 INTEGRATED CAR RADIO |
TEF6902AH/V5S,518 | NXP Semiconductors | 调谐器 INTEGRATED CAR RADIO |
TFF1003HN/N1,115 | NXP Semiconductors | 锁相环 - PLL Low Phase Noise SMD 816MHz 3.3V-10dBm |
TFF1003HN/N1,118 | NXP Semiconductors | 锁相环 - PLL LOW PHASE NOISE LO GEN FOR VSAT APPS |
TFF1014HN/N1,135 | NXP Semiconductors | 上下转换器 12.75GHz 5V 52mA |
TFF1015HN/N1,135 | NXP Semiconductors | 上下转换器 12.75GHz 5V 52mA |
TFF1017HN/N1,135 | NXP Semiconductors | 上下转换器 12.75GHz 5V 52mA |
TFF1018HN/N1,135 | NXP Semiconductors | 上下转换器 12.75GHz 5V 52mA |
TFF11084HN/N1,111 | NXP Semiconductors | 锁相环 - PLL 1CIR LO 538MHz 3.3V |
TFF11086HN/N1,111 | NXP Semiconductors | 锁相环 - PLL 3.3V 8.71GHz Low Phs Noise VSAT LO Gnrtr |
TFF11086HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11092HN/N1 | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11092HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11096HN/N1,111 | NXP Semiconductors | 锁相环 - PLL 1CIR LO 613MHz 3.3V |
TFF11096HN/N1,118 | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11096HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11101HN/N1,118 | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11101HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11105HN/N1,118 | NXP Semiconductors | 锁相环 - PLL 1CIR LO 675MHz 3.3V |
TFF11115HN/N1,118 | NXP Semiconductors | 锁相环 - PLL LOW PHASE NOISE LO GENERATOR |
TFF11139HN/N1,118 | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11139HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11142HN/N1,111 | NXP Semiconductors | 锁相环 - PLL 3.3V 14.42GHz Lo Phs Noise VSAT LO Gnrtr |
TFF11142HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11145HN/N1,118 | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11145HN/N1X | NXP Semiconductors | 锁相环 - PLL Low phase noise LO generator forVSAT |
TFF11152HN/N1,111 | NXP Semiconductors | 锁相环 - PLL 1CIR LO 969MHz 3.3V |