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Toshiba新品推出SSM3K35CTC

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联系人:万小姐、龚先生、周小姐,肖小姐,张小姐,程先生 联系电话:0755-83722245,0755-28194352,075528193653,28197027分机806,83722245,29806019,0791-86663634,0791-86227604

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产品亮点 > Compact Package CST3C MOSFET

 

Compact Package CST3C MOSFET

Toshiba expands their lineup of MOSFETs with their compact package CST3C MOSFET, for controlling power sources or data signals in mobile devices

Toshiba has expanded their lineup of MOSFETs with the launch of their SSM3K35CTC and SSM3J35CTC in a compact, 0.8 mm × 0.6 mm, CST3C package. These MOSFETs are suitable for controlling power sources or data signals in mobile devices such as smart phones and wearable devices. Toshiba's CST3C package is so compact that its footprint is one third of the industry standard SOT-723 package, making it suitable for high-density mounting. In addition, the products achieve lower on-resistance compared with SOT-723 package products.


Features

Low drain-source on-resistance

SSM3K35CTC : RDS(ON)= 2.4 Ω (typ) @ VGS= 1.2 V

SSM3J35CTC : RDS(ON)= 3.2 Ω (typ) @ VGS= -1.2 V

Compact CST3C package (0.8 mm × 0.6 mm)

Can be controlled with the gate voltage of 1.2 V

Applications  

Smart phones

Tablet PCs

 

Wearable devices

Compact Package CST3C MOSFET

图片 制造商零件编号 描述 FET 类型 FET 功能 不同 Vds 时的输入电容(Ciss) 可供货数量

SSM3K35CTC,L3F MOSFET N-CH 20V 0.18A MOSFET N 通道,金属氧化物 逻辑电平栅极,1.2V 驱动 36pF @ 10V 20000 - 立即发货


SSM3J35CTC,L3F MOSFET P-CH 20V 0.25A CST3C MOSFET P 通道,金属氧化物 逻辑电平栅极,1.2V 驱动 42pF @ 10V 20000 - 立即发货