原力达供应Vishay原厂集成式功率级SIC630/SIC631/SIC632二极管
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SIC530CD-T1-GE3 IC CTLR STAGE 30A 5V PWM PPAK ML SIC530CD-T1-GE3 IC CTLR STAGE 30A 5V PWM PPAK ML 半桥 同步降压转换器 3050
SIC530CD-T1-GE3
SIC532CD-T1-GE3 IC CTLR STAGE 30A 5V PWM PPAK ML SIC532CD-T1-GE3 IC CTLR STAGE 30A 5V PWM PPAK ML 半桥 同步降压转换器 3030
SIC532CD-T1-GE3
SIC632ACD-T1-GE3 IC CTLR STAGE 50A 3.3V PWM PPAK SIC632ACD-T1-GE3 IC CTLR STAGE 50A 3.3V PWM PPAK 半桥 同步降压转换器 3000
SIC632ACD-T1-GE3
SIC632CD-T1-GE3 IC CTLR STAGE 50A 5V PWM PPAK ML SIC632CD-T1-GE3 IC CTLR STAGE 50A 5V PWM PPAK ML 半桥 同步降压转换器 3050
SIC632CD-T1-GE3
SIC631CD-T1-GE3 IC CTLR STAGE 50A 5V PWM PPAK ML SIC631CD-T1-GE3 IC CTLR STAGE 50A 5V PWM PPAK ML 半桥 同步降压转换器 3000
SIC631CD-T1-GE3
SIC531ACD-T1-GE3 IC CTLR STAGE 30A 3.3V PWM PPAK SIC531ACD-T1-GE3 IC CTLR STAGE 30A 3.3V PWM PPAK 半桥 同步降压转换器 0 SIC531ACD-T1-GE3
由于下一代CPU的大电流要求，高性能笔记本/超极本需要极高的功率密度。同时，这些设备还必须在最终产品处于联网待机或睡眠/休眠模式的低功耗状态下保持高效。SIC630/SIC631/SIC632 以不足16mm2的小占位满足了所有这些要求。该器件采用紧凑的3.5 mm x 4.5 mm PowerPAK® 封装，集成一个高性能驱动器以及同步降压稳压器需要的高边和低边MOSFET。其独特的封装结构限度减小了杂散电感及电阻，允许超过1.5 MHz的开关频率、30A电流和40A峰值电流。与上一代分立解决方案相比，新器件只占用电路板面积的45%且未牺牲效率。由于下一代笔记本/超极本的电流要求增加了50%以上，所以这一解决方案减小占位非常有助于在不损害工业和美学设计的情况下实现更强劲的运算性能。
为满足低功耗效率要求，该器件支持以下工作状态：
二极管仿真模式：二极管仿真模式在轻负载情况下支持更高的转换器效率。在启用二极管仿真模式时，SiC530会检测输出电感的过零电流并关断低边MOSFET。这可确保实现断续导电模式（DCM）并提高轻负载条件下的效率，从而延长电池续航时间。
PS-4模式：在此模式下，SiC530中的驱动器将关断高边和低边MOSFET SiC530，使电流消耗减小至5 μA的典型值。在超极本应用中，这是帮助实现PS4状态所要求的低待机电流的一个重要特性。该器件能够在5微秒内轻易从该状态唤醒，从而允许从睡眠状态快速唤醒。
To meet the need for high current, high-efficiency, and high-power-density performance in next-generation notebooks, Ultrabooks, and desktops, Vishay Siliconix introduces five VRPower integrated DrMOS power stage solutions for multiphase POL regulator applications. Combining power MOSFETs, an advanced MOSFET gate driver IC, and a bootstrap Schottky diode in thermally enhanced 4.5 mm by 3.5 mm PowerPAK MLP4535-22L and 5 mm by 5 mm PowerPAK MLP55-31L packages, the Vishay Siliconix SiC530, SiC531, SiC532, SiC631, and SiC632 offer a 45% smaller footprint compared to utilizing discrete solutions.
•Optimized for computing platforms utilizing Intel’s Skylake platform
•High switching frequencies shrink the overall solution size and profile by reducing the size of the output filter
•High- and low-side MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET® technology to reduce switching and conduction losses
•Reduce current consumption to 5 µA when systems are operating in standby mode, and can be woken from this state within 5 µs
Features
•Combine power MOSFETs, advanced MOSFET gate driver IC, and a bootstrap Schottky diode
•High-power density: ◦Continuous current to 30 A in the 4.5 mm by 3.5 mm PowerPAK MLP4535-22L package
◦Continuous current to 40 A in the 5 mm by 5 mm PowerPAK MLP55-31L package
•Support PS4 mode light-load requirements for IMVP8
•RoHS-compliant and halogen-free
•Lower package parasitic enable switching frequencies up to 2 MHz
•Driver IC is compatible with a wide range of PWM controllers and supports tri-state PWM logic of 5 V
•High efficiency: ◦Diode emulation mode circuity and zero-current detect increase light-load efficiency
◦Adaptive dead time control improves efficiency at all load points
•Feature under-voltage lockout (UVLO)
Applications
•DC/DC voltage regulation modules
•Multiphase VRDs for CPUs, GPUs, and memory in next-generation notebooks, Ultrabooks, desktops, and workstations
•Power delivery for high-performance ASICs and FPGAs in embedded systems
•Cloud computing
•Telecom/networking infrastructure
•Industrial PCs
•Synchronous buck converters
